PART |
Description |
Maker |
PAL16R8-7LMB PAL16R4-7LMB PAL16R6-7LMB PAL16L8-10L |
OT PLD, 7 ns, CQCC20 CERAMIC, LCC-20 OT PLD, 10 ns, CQCC20 CERAMIC, LCC-20
|
Cypress Semiconductor, Corp.
|
ATV750BV-15GC ATV750BV-15GI ATV750BV-15GM ATV750BV |
OT PLD, 15 ns, CDIP24 0.300 INCH, CERDIP-24 OT PLD, 15 ns, PQCC28 PLASTIC, MO-047AB, JLCC-28 OT PLD, 15 ns, CQCC28 CERAMIC, LCC-28 UV PLD, 25 ns, CQCC28
|
Atmel, Corp. ATMEL CORP
|
ATF22V10CQZ ATF22V10CQZ-20JC ATF22V10CQZ-20JI ATF2 |
Highperformance EE PLD EE PLD, 15 ns, PDSO24 Highperformance EE PLD EE PLD, 15 ns, PDIP24 Highperformance EE PLD EE PLD, 20 ns, PDSO24 ATF22V10CZ/CQZ [Updated 3/01. 13 Pages] 500 gate high-speed. zero power electrically erasable PLD. 24 pins From old datasheet system
|
Atmel, Corp. ATM Electronic, Corp. Atmel Corp. ATMEL Corporation
|
PALC16R6Z-25CQSTD PALC16L8Z-25CQSTD PALC16R8Z-25CQ |
UV PLD, 25 ns, CDIP20 WINDOWED, CERDIP-20 OT PLD, 25 ns, CDIP20 CERAMIC, DIP-20 OT PLD, 25 ns, PQCC20 0.351 X 0.351 INCH, PLASTIC, LCC-20 OT PLD, 25 ns, PDIP20 0.250 X 1 INCH, PLASTIC, DIP-20
|
Advanced Micro Devices, Inc.
|
GAL16V8D-20QPI GAL16V8D-20QJI GAL16V8D-7LP GAL16V8 |
Aluminum Snap-In Capacitor; Capacitance: 2700uF; Voltage: 160V; Case Size: 30x50 mm; Packaging: Bulk High Performance E2CMOS PLD Generic Array Logic EE PLD, 25 ns, PQCC20 High Performance E2CMOS PLD Generic Array Logic EE PLD, 3.5 ns, PQCC20 High Performance E2CMOS PLD Generic Array Logic EE PLD, 7.5 ns, PDIP20 High Performance E2CMOS PLD Generic Array Logic EE PLD, 15 ns, PDIP20 High Performance E2CMOS PLD Generic Array Logic EE PLD, 7.5 ns, PDSO20 High Performance E2CMOS PLD Generic Array Logic EE PLD, 25 ns, PDIP20 High Performance E2CMOS PLD Generic Array Logic EE PLD, 15 ns, PQCC20 IC,MICROCONTROLLER,8-BIT,68HC08 CPU,CMOS,DIP,8PIN,PLASTIC RoHS Compliant: No
|
Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
PAL14L8MJS/883B PAL12L10MW/883B PAL14L8MW/883B |
OT PLD, 45 ns, CDIP20 0.250 X 1 INCH, CERAMIC, DIP-20 OT PLD, 45 ns, CDFP20 0.250 X 0.500 INCH, CERPACK-20
|
Advanced Micro Devices, Inc.
|
ISPLSI1016E06 ISPLSI1016E125LTN44I ISPLSI1016E80LT |
EE PLD, 18.5 ns, PQFP44 EE PLD, 18.5 ns, PQCC44 EE PLD, 13 ns, PQCC44 EE PLD, 10 ns, PQFP44 In-System Programmable High Density PLD
|
LATTICE SEMICONDUCTOR CORP
|
PAL22V10G-10LMB |
OT PLD, 10 ns, CQCC28 CERAMIC, LCC-28
|
Cypress Semiconductor, Corp.
|
LC5512MC-75F484I LC5512MC-75F256I LC5512MC-45QN208 |
EE PLD, 9.5 ns, PBGA484 EE PLD, 9.5 ns, PBGA256 EE PLD, 5.7 ns, PQFP208
|
LATTICE SEMICONDUCTOR CORP
|
8600V ISPLSI8600V-90LB272 ISPLSI8600V-125LB492 ISP |
3.3V In-System Programmable SuperBIGHigh Density PLD EE PLD, 24 ns, PBGA492 3.3V In-System Programmable SuperBIGHigh Density PLD EE PLD, 24 ns, PBGA272 GT 14C 14#16 SKT RECP LINE EE PLD, 16 ns, PBGA492 3.3V In-System Programmable SuperBIGHigh Density PLD 3.3在系统可编程SuperBIG⑩高密度可编程逻辑器件 3.3V In-System Programmable SuperBIGHigh Density PLD EE PLD, 13.5 ns, PBGA492
|
Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
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